Chinese memory manufacturer Longsys has tested the next generation of memory standard, DDR5, and has shared the test results online. The 4800 MHz DDR5 memory was tested with Intel’s 8 core Alder Lake Desktop CPUs and the results were astounding.
The memory modules that were tested featured two different variants, including single rank and dual rank modules which offered 16GB and 32GB memory respectively. Both of these modules were based on the UDIMM form factor and featured 4800 MHz pin speeds. The RAM stick had an 8 layer PCB design.
As mentioned earlier, the memory was tested with Intel’s Alder Lake CPUs and the DDR5 memory showed a 53% improvement over DDR4. There was a 28% improvement in read speeds, 27% improvement in write speeds, and 10% improvement in copy tests.
The latency, however, was much worse than DDR4, and this is because it was only an early test kit. There was also the fact that DDR5 was working on dual rank, which can sometimes perform worse than a single rank memory.
Additional features of the next-generation DDR5 memory include 16n Prefetch mode, twice as many banks per module, two independent 32-bit channels per module, enhanced end-to-end reception mode, synchronous refresh mode for the bank, and more.
We already have a number of different memory manufacturers that have announced their upcoming DDR5 memory kits. We can expect to hear more by mid-2021.
